Japanese semiconductor manufacturer Rapidus has successfully prototyped a 2-nanometer generation GAA transistor, marking its first step as a nationally backed company.
However, mass production will require funding of 5 trillion yen and the securing of highly skilled personnel, making the road to recovery a difficult one, according to Sekiguchi Waichi, CEO of MM Research Institute, Inc.
On July 18, 2025, Rapidus announced that it had successfully prototyped a 2-nanometer (nm) generation GAA (Gate-All-Around) transistor at its IIM-1 manufacturing facility in Chitose, Hokkaido.
This achievement is not simply a technological breakthrough; it also symbolizes a national strategy that will determine Japan's economic security and industrial competitiveness.
Author's summary: Japan's semiconductor industry takes a step forward with Rapidus' prototype.