Interconnect technology in high bandwidth memory (HBM) is at a crossroads, with two possible paths: microbump technology and hybrid bonding.
Both technologies are evolving to meet the stringent requirements of next-generation HBM, including increased I/O density, higher bandwidth, and improved performance.
As data rates rise, the need for increased output contact pad density grows, prompting innovation in bump technologies beyond their previously thought physical and performance limits.
Some memory designers are achieving bump sizes below 10µm in high-volume manufacturing.
By Damon Tsai, Woo Young Han, and Tim Kryman
Author's summary: Innovations in interconnect technology for high bandwidth memory.